STW57N65M5-4

Mfr. #: STW57N65M5-4
निर्माता: STMicroelectronics
विवरण: MOSFET N CH 650V 42A TO247-4
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STW57N65M5-4 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW57N65M5-4 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-247-4 Si is the technology used. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 9 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 42 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 98 nC.

STW57N65M5-4 Image

STW57N65M5-4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW57N65M5-4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-247-4
  • Technology Si
  • Pd-Power-Dissipation 250 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8 ns
  • Rise-Time 9 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 42 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 63 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 98 nC

STW57N65M5-4

STW57N65M5-4 Specifications

STW57N65M5-4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-4.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 250 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 8 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 9 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 42 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 63 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 98 nC

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