STW48N60M2

Mfr. #: STW48N60M2
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 600V 42A TO-247
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STW48N60M2 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW48N60M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 600V This product has an 3060pF @ 100V value of 300pF @ 25V. This product's Standard. 42A (Tc) continuous drain-ID current at 25°C; This product has an 70 mOhm @ 21A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 300 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 119 ns of 16 ns. This product has a 17 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 42 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 70 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 18.5 ns. Qg-Gate-Charge is 70 nC. This product operates in Enhancement channel mode for optimal performance.

STW48N60M2 Image

STW48N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW48N60M2 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh M2
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 300W
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 3060pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 42A (Tc)
  • Rds-On-Max-Id-Vgs 70 mOhm @ 21A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 70nC @ 10V
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 119 ns
  • Rise-Time 17 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 42 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2 V
  • Rds-On-Drain-Source-Resistance 70 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 18.5 ns
  • Qg-Gate-Charge 70 nC
  • Channel-Mode Enhancement

STW48N60M2

STW48N60M2 Specifications

STW48N60M2 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M2.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-247

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 3060pF @ 100V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 42A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 70 mOhm @ 21A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 300 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 119 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 17 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 42 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 70 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 13 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 18.5 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 70 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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