STW23NM50N

STW23NM50N Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 162 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW23NM50N Image

STW23NM50N Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel MDmesh
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Id-Continuous-Drain-Current 17 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Rds-On-Drain-Source-Resistance 162 mOhms
• Transistor-Polarity N-Channel

STW23NM50N FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel MDmesh.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 17 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 162 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel