STW18NM60ND

Mfr. #: STW18NM60ND
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 600V 13A TO-247
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STW18NM60ND डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW18NM60ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 130 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 15.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 290 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 55 ns. Qg-Gate-Charge is 34 nC.

STW18NM60ND Image

STW18NM60ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW18NM60ND Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 18 ns
  • Rise-Time 15.5 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 13 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 290 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 55 ns
  • Qg-Gate-Charge 34 nC

STW18NM60ND

STW18NM60ND Specifications

STW18NM60ND FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel MDmesh.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1.340411 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 130 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 18 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 15.5 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 13 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 290 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 13 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 55 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 34 nC.

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