STU7NM60N

Mfr. #: STU7NM60N
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 600V 5A IPAK
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STU7NM60N डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STU7NM60N Overview

Product belongs to the MDmesh II series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style TO-251-3 Short Leads, IPak, TO-251AA Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: I-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 363pF @ 50V value of 300pF @ 25V. This product's Standard. 5A (Tc) continuous drain-ID current at 25°C; This product has an 900 mOhm @ 2.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 10 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 900 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 26 ns This product has a 7 ns. Qg-Gate-Charge is 14 nC. This product operates in Enhancement channel mode for optimal performance.

STU7NM60N Image

STU7NM60N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU7NM60N Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh II
  • Packaging Tube
  • Unit-Weight 0.139332 oz
  • Mounting-Style Through Hole
  • Package-Case TO-251-3 Short Leads, IPak, TO-251AA
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package I-Pak
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 45W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 363pF @ 50V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 5A (Tc)
  • Rds-On-Max-Id-Vgs 900 mOhm @ 2.5A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 14nC @ 10V
  • Pd-Power-Dissipation 45 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 12 ns
  • Rise-Time 10 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 5 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 900 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 26 ns
  • Typical-Turn-On-Delay-Time 7 ns
  • Qg-Gate-Charge 14 nC
  • Channel-Mode Enhancement

STU7NM60N

STU7NM60N Specifications

STU7NM60N FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh II

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-251-3 Short Leads, IPak, TO-251AA.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is I-Pak.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 363pF @ 50V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 5A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 900 mOhm @ 2.5A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 45 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 12 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 10 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 900 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 26 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 14 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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