STU6N65M2

STU6N65M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style Trade name: MDmesh. IPAK-3 Si is the technology used. Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 1.35 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6.5 ns This product has a 19 ns. Qg-Gate-Charge is 9.8 nC.

STU6N65M2 Image

STU6N65M2 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series MDmesh M2
• Packaging Tube
• Unit-Weight 0.139332 oz
• Mounting-Style Through Hole
• Tradename MDmesh
• Package-Case IPAK-3
• Technology Si
• Pd-Power-Dissipation 60 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20 ns
• Rise-Time 7 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 4 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 1.35 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 6.5 ns
• Typical-Turn-On-Delay-Time 19 ns
• Qg-Gate-Charge 9.8 nC

STU6N65M2 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh M2.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.139332 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: What is the Tradename of the product?

  Q: The Tradename of the product is MDmesh.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed IPAK-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 60 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 20 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 7 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 4 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 1.35 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 6.5 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 19 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 9.8 nC.