STP80PF55

Mfr. #: STP80PF55
निर्माता: STMicroelectronics
विवरण: MOSFET P-CH 55V 80A TO-220
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STP80PF55 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP80PF55 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 55V This product has an 5500pF @ 25V value of 300pF @ 25V. This product's Standard. 80A (Tc) continuous drain-ID current at 25°C; This product has an 18 mOhm @ 40A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 80 ns of 16 ns. This product has a 190 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 55 V. The 18 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 165 ns This product has a 35 ns. This product features a 32 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP80PF55 Image

STP80PF55

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP80PF55 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series STripFET II
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • FET-Type MOSFET P-Channel, Metal Oxide
  • Power-Max 300W
  • Transistor-Type 1 P-Channel
  • Drain-to-Source-Voltage-Vdss 55V
  • Input-Capacitance-Ciss-Vds 5500pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 80A (Tc)
  • Rds-On-Max-Id-Vgs 18 mOhm @ 40A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 258nC @ 10V
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 80 ns
  • Rise-Time 190 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 80 A
  • Vds-Drain-Source-Breakdown-Voltage - 55 V
  • Rds-On-Drain-Source-Resistance 18 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 165 ns
  • Typical-Turn-On-Delay-Time 35 ns
  • Forward-Transconductance-Min 32 S
  • Channel-Mode Enhancement

STP80PF55

STP80PF55 Specifications

STP80PF55 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STripFET II.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-220AB.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET P-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 55V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 5500pF @ 25V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 80A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 18 mOhm @ 40A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 300 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 80 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 190 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 16 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 80 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 55 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 18 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is P-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 165 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 35 ns

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 32 S

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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