| Mfr. #: | STP7N65M2 |
|---|---|
| निर्माता: | STMicroelectronics |
| विवरण: | Darlington Transistors MOSFET POWER MOSFET |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | STP7N65M2 डाटा पाना |


Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style Trade name: MDmesh. TO-220-3 Si is the technology used. Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 1.15 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 8 ns. Qg-Gate-Charge is 9 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP7N65M2 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh M2.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Tradename?
Q: The product Tradename is MDmesh.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 60 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 20 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 20 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 25 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 5 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 1.15 Ohms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 30 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 8 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 9 nC