STP5NK80Z

Mfr. #: STP5NK80Z
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 800V 4.3A TO-220
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STP5NK80Z डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP5NK80Z Overview

Product belongs to the PowerMESH series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 910pF @ 25V value of 300pF @ 25V. This product's Standard. 4.3A (Tc) continuous drain-ID current at 25°C; This product has an 2.4 Ohm @ 2.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 25 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 2.4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 18 ns. Qg-Gate-Charge is 32.4 nC. This product features a 4.25 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP5NK80Z Image

STP5NK80Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP5NK80Z Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series PowerMESH
  • Packaging Tube
  • Unit-Weight 0.050717 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 110W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 800V
  • Input-Capacitance-Ciss-Vds 910pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 4.3A (Tc)
  • Rds-On-Max-Id-Vgs 2.4 Ohm @ 2.15A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 45.5nC @ 10V
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 30 ns
  • Rise-Time 25 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 4.3 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Rds-On-Drain-Source-Resistance 2.4 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 45 ns
  • Typical-Turn-On-Delay-Time 18 ns
  • Qg-Gate-Charge 32.4 nC
  • Forward-Transconductance-Min 4.25 S
  • Channel-Mode Enhancement

STP5NK80Z

STP5NK80Z Specifications

STP5NK80Z FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed PowerMESH

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.050717 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220AB.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 800V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 910pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 4.3A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.4 Ohm @ 2.15A, 10V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 110 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 30 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 25 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 4.3 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.4 Ohms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 45 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 18 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 32.4 nC

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 4.25 S

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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