STP4N150

STP4N150 Overview

Product belongs to the PowerMESH series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1500V (1.5kV) This product has an 1300pF @ 25V value of 300pF @ 25V. This product's Standard. 4A (Tc) continuous drain-ID current at 25°C; This product has an 7 Ohm @ 2A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 160 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 45 ns of 16 ns. This product has a 30 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1500 V. The 5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 35 ns. This product features a 3.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP4N150 Image

STP4N150 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series PowerMESH
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 160W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
• Input-Capacitance-Ciss-Vds 1300pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 4A (Tc)
• Rds-On-Max-Id-Vgs 7 Ohm @ 2A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 50nC @ 10V
• Pd-Power-Dissipation 160 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 45 ns
• Rise-Time 30 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 4 A
• Vds-Drain-Source-Breakdown-Voltage 1500 V
• Rds-On-Drain-Source-Resistance 5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 45 ns
• Typical-Turn-On-Delay-Time 35 ns
• Forward-Transconductance-Min 3.5 S
• Channel-Mode Enhancement

STP4N150 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is PowerMESH.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-220AB.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 1500V (1.5kV).

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 1300pF @ 25V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 4A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 7 Ohm @ 2A, 10V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 160 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 45 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 30 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 4 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1500 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 45 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 35 ns

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 3.5 S

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.