STP45N65M5

Mfr. #: STP45N65M5
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 650V 35A TO220
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STP45N65M5 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP45N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 3375pF @ 100V value of 300pF @ 25V. This product's Standard. 35A (Tc) continuous drain-ID current at 25°C; This product has an 78 mOhm @ 19.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 208 W The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 78 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STP45N65M5 Image

STP45N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP45N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series MDmesh V
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 210W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 650V
  • Input-Capacitance-Ciss-Vds 3375pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 35A (Tc)
  • Rds-On-Max-Id-Vgs 78 mOhm @ 19.5A, 10V
  • Vgs-th-Max-Id 5V @ 250μA
  • Gate-Charge-Qg-Vgs 91nC @ 10V
  • Pd-Power-Dissipation 208 W
  • Id-Continuous-Drain-Current 35 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 78 mOhms
  • Transistor-Polarity N-Channel

STP45N65M5

STP45N65M5 Specifications

STP45N65M5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh V.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 650V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 3375pF @ 100V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 35A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 78 mOhm @ 19.5A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 208 W.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 35 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 78 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

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