| Mfr. #: | STP170N8F7 |
|---|---|
| निर्माता: | STMicroelectronics |
| विवरण: | MOSFET N-CH 80V 120A TO-220AB |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | STP170N8F7 डाटा पाना |


Product belongs to the N-channel STripFET series. Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 53 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V to 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 79 ns This product has a 38 ns. Qg-Gate-Charge is 120 nC. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP170N8F7 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel STripFET
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 37 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 53 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V to 4.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 3.9 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 79 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 38 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 120 nC.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement