STP165N10F4

STP165N10F4 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 315 W This product's 4 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 5.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 192 nC.

STP165N10F4 Image

STP165N10F4 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel STripFET
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 315 W
• Vgs-Gate-Source-Voltage 4 V
• Id-Continuous-Drain-Current 120 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 5.5 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 192 nC

STP165N10F4 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel STripFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 315 W

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 4 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 5.5 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 192 nC