| Mfr. #: | STP160N3LL |
|---|---|
| निर्माता: | STMicroelectronics |
| विवरण: | MOSFET N-CH 30V 120A TO-220AB |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | STP160N3LL डाटा पाना |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 30 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 120 A; The Rds On - Drain-Source Resistance of the product is 3.2 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 1 V to 2.5 V Gate-Source Threshold Voltage of Vgs th; 42 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Enhancement Channel Mode Fall Time of 23.4 ns - 55 C minimum operating temperature The power dissipation is 136 W. 91 ns Rise Time Product belongs to the N-channel STripFET series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 24.5 ns; The 19 ns typical turn-on delay time The Unit Weight is 0.011640 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP160N3LL Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-220-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 30 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 120 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 3.2 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 20 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1 V to 2.5 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 42 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 23.4 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 136 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 91 ns
A: At what frequency does the Series?
Q: The product Series is N-channel STripFET.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 24.5 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 19 ns
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.011640 oz.