STP10NK60Z

Mfr. #: STP10NK60Z
निर्माता: STMicroelectronics
विवरण: IGBT Transistors MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STP10NK60Z डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP10NK60Z Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 115 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 10 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 750 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 55 ns This product has a 20 ns. Qg-Gate-Charge is 50 nC. This product features a 7.8 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP10NK60Z Image

STP10NK60Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP10NK60Z Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 0.050717 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 115 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 30 ns
  • Rise-Time 20 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 10 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 750 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 55 ns
  • Typical-Turn-On-Delay-Time 20 ns
  • Qg-Gate-Charge 50 nC
  • Forward-Transconductance-Min 7.8 S
  • Channel-Mode Enhancement

STP10NK60Z

STP10NK60Z Specifications

STP10NK60Z FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.050717 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 115 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 30 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 20 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 10 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 750 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 55 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 20 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 50 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 7.8 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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विस्तार मूल्य
1
US$ ०.७६
US$ ०.७६
10
US$ ०.७२
US$ ७.२१
100
US$ ०.६८
US$ ६८.२८
500
US$ ०.६४
US$ ३२२.४५
1000
US$ ०.६१
US$ ६०७.००
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