STL70N10F3

Mfr. #: STL70N10F3
निर्माता: STMicroelectronics
विवरण: IGBT Transistors MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STL70N10F3 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL70N10F3 Overview

Product belongs to the STL70N10F3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Power-off control: 136 W This product has a 5.7 ns of 16 ns. This product has a 11 ns of 16 ns. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 8.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17 ns. Qg-Gate-Charge is 56 nC. This product operates in Enhancement channel mode for optimal performance.

STL70N10F3 Image

STL70N10F3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL70N10F3 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series STL70N10F3
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Pd-Power-Dissipation 136 W
  • Fall-Time 5.7 ns
  • Rise-Time 11 ns
  • Id-Continuous-Drain-Current 16 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 8.4 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 43 ns
  • Typical-Turn-On-Delay-Time 17 ns
  • Qg-Gate-Charge 56 nC
  • Channel-Mode Enhancement

STL70N10F3

STL70N10F3 Specifications

STL70N10F3 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STL70N10F3

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is PowerFlat-8.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 136 W

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 5.7 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 11 ns.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 16 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.4 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 43 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 17 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 56 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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