| Mfr. #: | STFI9N80K5 |
|---|---|
| निर्माता: | STMicroelectronics |
| विवरण: | MOSFET N-CH 800V 7A I2PAKFP |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | STFI9N80K5 डाटा पाना |
RoHS compliant with Details Input bias current of Through Hole Package type is I2PAKFP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 7 A; The Rds On - Drain-Source Resistance of the product is 900 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 13.6 ns - 55 C minimum operating temperature The power dissipation is 25 W. 5.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 65.3 ns; The 11 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFI9N80K5 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is I2PAKFP-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 800 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 7 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 900 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 30 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 12 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 13.6 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 25 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 5.7 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 65.3 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 11 ns.