STF2N95K5

STF2N95K5 Overview

Product belongs to the SuperMESH5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 950V This product has an 105pF @ 100V value of 300pF @ 25V. This product's Standard. 2A (Tc) continuous drain-ID current at 25°C; This product has an 5 Ohm @ 1A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 20 W This product has a 32.5 ns of 16 ns. This product has a 13.5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 950 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 4.2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20.5 ns This product has a 8.5 ns. Qg-Gate-Charge is 10 nC.

STF2N95K5 Image

STF2N95K5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH5
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3 Full Pack
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220FP
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 20W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 950V
• Input-Capacitance-Ciss-Vds 105pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 2A (Tc)
• Rds-On-Max-Id-Vgs 5 Ohm @ 1A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 10nC @ 10V
• Pd-Power-Dissipation 20 W
• Fall-Time 32.5 ns
• Rise-Time 13.5 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 2 A
• Vds-Drain-Source-Breakdown-Voltage 950 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 4.2 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 20.5 ns
• Typical-Turn-On-Delay-Time 8.5 ns
• Qg-Gate-Charge 10 nC

STF2N95K5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is SuperMESH5.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3 Full Pack.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-220FP

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 950V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 105pF @ 100V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 2A (Tc)

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 5 Ohm @ 1A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 20 W.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 32.5 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 13.5 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 950 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4.2 Ohms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 20.5 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8.5 ns

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 10 nC.