STD840DN40

Mfr. #: STD840DN40
निर्माता: STMicroelectronics
विवरण: Bipolar Transistors - BJT Dual NPN High Volt 400V Vceo 700V Vcbo
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STD840DN40 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD840DN40 Overview

Product belongs to the 500V to 1000V Transistors series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 8 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1V @ 400mA, 2A Power-off control: 3 W Maximum operating temperature of + 150 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1 V The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 8.

STD840DN40 Image

STD840DN40

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD840DN40 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Arrays
  • Series 500V to 1000V Transistors
  • Packaging Tube
  • Unit-Weight 0.080001 oz
  • Mounting-Style Through Hole
  • Package-Case 8-DIP (0.300", 7.62mm)
  • Mounting-Type Through Hole
  • Supplier-Device-Package 8-DIP
  • Configuration Dual
  • Power-Max 3W
  • Transistor-Type 2 NPN (Dual)
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 400V
  • DC-Current-Gain-hFE-Min-Ic-Vce 8 @ 2A, 5V
  • Vce-Saturation-Max-Ib-Ic 1V @ 400mA, 2A
  • Current-Collector-Cutoff-Max 250μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 400 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1 V
  • Collector-Base-Voltage-VCBO 700 V
  • Emitter-Base-Voltage-VEBO 9 V to 18 V
  • Maximum-DC-Collector-Current 8 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 8

STD840DN40

STD840DN40 Specifications

STD840DN40 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 500V to 1000V Transistors.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.080001 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 8-DIP (0.300", 7.62mm)

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-DIP

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 NPN (Dual)

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 4A

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 400V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 8 @ 2A, 5V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1V @ 400mA, 2A

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 400 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 1 V

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 700 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 9 V to 18 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 8 A.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 4 A.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 8.

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