STD7N80K5

Mfr. #: STD7N80K5
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 800V 6A DPAK
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STD7N80K5 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD7N80K5 Overview

Product belongs to the SuperMESH5 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: DPAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 360pF @ 100V value of 300pF @ 25V. This product's Standard. 6A (Tc) continuous drain-ID current at 25°C; This product has an 1.2 Ohm @ 3A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20.2 ns of 16 ns. This product has a 8.3 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 23.7 ns This product has a 11.3 ns. Qg-Gate-Charge is 13.4 nC. This product operates in Enhancement channel mode for optimal performance.

STD7N80K5 Image

STD7N80K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD7N80K5 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SuperMESH5
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package DPAK
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 110W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 800V
  • Input-Capacitance-Ciss-Vds 360pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 6A (Tc)
  • Rds-On-Max-Id-Vgs 1.2 Ohm @ 3A, 10V
  • Vgs-th-Max-Id 5V @ 100μA
  • Gate-Charge-Qg-Vgs 13.4nC @ 10V
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 20.2 ns
  • Rise-Time 8.3 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 6 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 1.2 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 23.7 ns
  • Typical-Turn-On-Delay-Time 11.3 ns
  • Qg-Gate-Charge 13.4 nC
  • Channel-Mode Enhancement

STD7N80K5

STD7N80K5 Specifications

STD7N80K5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SuperMESH5

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is DPAK.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 800V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 360pF @ 100V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 6A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 1.2 Ohm @ 3A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 110 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 20.2 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 8.3 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 6 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 800 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 1.2 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 23.7 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 11.3 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 13.4 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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