STD2LN60K3

STD2LN60K3 Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 45 W This product has a 21 ns of 16 ns. This product has a 8.5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 4.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 23.5 ns This product has a 10 ns. Qg-Gate-Charge is 12 nC. This product operates in Enhancement channel mode for optimal performance.

STD2LN60K3 Image

STD2LN60K3 Specifications

• Manufacturer ST
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Reel
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 45 W
• Fall-Time 21 ns
• Rise-Time 8.5 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 2 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
• Rds-On-Drain-Source-Resistance 4.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 23.5 ns
• Typical-Turn-On-Delay-Time 10 ns
• Qg-Gate-Charge 12 nC
• Channel-Mode Enhancement

STD2LN60K3 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel MDmesh.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.139332 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-252-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 45 W

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 21 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 8.5 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4.5 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 4.5 Ohms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 23.5 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 10 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 12 nC

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement