STB10N95K5

Mfr. #: STB10N95K5
निर्माता: STMicroelectronics
विवरण: MOSFET N-CH 950V 8A D2PAK
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STB10N95K5 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB10N95K5 Overview

Product belongs to the SuperMESH5 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D2PAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 950V This product has an 630pF @ 100V value of 300pF @ 25V. This product's Standard. 8A (Tc) continuous drain-ID current at 25°C; This product has an 800 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 130 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 14 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 950 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 800 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 51 ns This product has a 22 ns. Qg-Gate-Charge is 22 nC. This product operates in Enhancement channel mode for optimal performance.

STB10N95K5 Image

STB10N95K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB10N95K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH5
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D2PAK
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 130W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 950V
  • Input-Capacitance-Ciss-Vds 630pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 8A (Tc)
  • Rds-On-Max-Id-Vgs 800 mOhm @ 4A, 10V
  • Vgs-th-Max-Id 5V @ 100μA
  • Gate-Charge-Qg-Vgs 22nC @ 10V
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 15 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage +/- 30 V
  • Id-Continuous-Drain-Current 8 A
  • Vds-Drain-Source-Breakdown-Voltage 950 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 800 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 51 ns
  • Typical-Turn-On-Delay-Time 22 ns
  • Qg-Gate-Charge 22 nC
  • Channel-Mode Enhancement

STB10N95K5

STB10N95K5 Specifications

STB10N95K5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SuperMESH5.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed D2PAK

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 950V

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 630pF @ 100V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 8A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 800 mOhm @ 4A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 130 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 15 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 14 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 8 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 950 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 800 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 51 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 22 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 22 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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