START499ETR

Mfr. #: START499ETR
निर्माता: STMicroelectronics
विवरण: Bipolar Transistors - BJT Discrete Med P AMP
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: START499ETR डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
START499ETR Overview

Product belongs to the START499ETR series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style SC-82A, SOT-343 Surface Mount mounting type Supplier device package: SOT-343 Configuration Single Transistor type: NPN Maximum current collector Ic is 600mA . Maximum collector-emitter breakdown voltage of 4.5V DC current gain minimum (hFE) of Ic/Vce at 160 @ 160mA, 4V. 3.3dB @ 1.8GHz typical noise figure The device offers a 15dB of 26dB. Power-off control: 600 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 4.5 V The transistor polarity is NPN. The 15 V voltage rating is 40 V. 1.5 V rating of 5 V Max DC collector current: 600 mA Gain-Bandwidth-Product: 42 GHz This product is capable of handling a 600 mA continuous collector current. Minimum hfe for DC collector-base gain is 160.

START499ETR Image

START499ETR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

START499ETR Specifications
  • Manufacturer ST
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series START499ETR
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case SC-82A, SOT-343
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-343
  • Configuration Single
  • Power-Max 600mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 600mA
  • Voltage-Collector-Emitter-Breakdown-Max 4.5V
  • DC-Current-Gain-hFE-Min-Ic-Vce 160 @ 160mA, 4V
  • Frequency-Transition 1.9GHz
  • Noise-Figure-dB-Typ-f 3.3dB @ 1.8GHz
  • Gain 15dB
  • Pd-Power-Dissipation 600 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 4.5 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 15 V
  • Emitter-Base-Voltage-VEBO 1.5 V
  • Maximum-DC-Collector-Current 600 mA
  • Gain-Bandwidth-Product-fT 42 GHz
  • Continuous-Collector-Current 600 mA
  • DC-Collector-Base-Gain-hfe-Min 160

START499ETR

START499ETR Specifications

START499ETR FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is START499ETR.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed SC-82A, SOT-343

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-343

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 600mA

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 4.5V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 160 @ 160mA, 4V

  • A: At what frequency does the Noise-Figure-dB-Typ-f?

    Q: The product Noise-Figure-dB-Typ-f is 3.3dB @ 1.8GHz.

  • A: At what frequency does the Gain?

    Q: The product Gain is 15dB.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 600 mW

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 4.5 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 15 V

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 1.5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 600 mA

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 42 GHz.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 600 mA.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 160.

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