SD56120M

SD56120M Overview

Product belongs to the SD56120 series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style M252 Si is the technology used. The device offers a 13 dB at 860 MHz of 26dB. Power-off control: 236 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 3 S of 500 S for high performance.

SD56120M Image

SD56120M Specifications

• Manufacturer ST
• Product Category Module
• Series SD56120
• Type RF Power MOSFET
• Packaging Tube
• Mounting-Style SMD/SMT
• Package-Case M252
• Technology Si
• Gain 13 dB at 860 MHz
• Output-Power 120 W
• Pd-Power-Dissipation 236 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 1 GHz
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 14 A
• Vds-Drain-Source-Breakdown-Voltage 65 V
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 3 S

SD56120M FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SD56120

• A: At what frequency does the Type?

  Q: The product Type is RF Power MOSFET.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed M252

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Gain?

  Q: The product Gain is 13 dB at 860 MHz.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 236 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 65 C.

• A: What is the Operating-Frequency of the product?

  Q: The Operating-Frequency of the product is 1 GHz.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 14 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 3 S.