PD57018-E

Mfr. #: PD57018-E
निर्माता: STMicroelectronics
विवरण: FET RF 65V 945MHZ PWRSO10
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: PD57018-E डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD57018-E Overview

Product belongs to the PD57018-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 16.5 dB at 945 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The 760 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. This product features a 1 S of 500 S for high performance.

PD57018-E Image

PD57018-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57018-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD57018-E
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Formed Lead)
  • Technology Si
  • Gain 16.5 dB at 945 MHz
  • Output-Power 18 W
  • Pd-Power-Dissipation 31.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage 65 V
  • Rds-On-Drain-Source-Resistance 760 mOhms
  • Transistor-Polarity N-Channel
  • Forward-Transconductance-Min 1 S

PD57018-E

PD57018-E Specifications

PD57018-E FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is PD57018-E.

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is PowerSO-10RF (Formed Lead).

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Gain?

    Q: The product Gain is 16.5 dB at 945 MHz.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 31.7 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 1 GHz.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 2.5 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 65 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 760 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 1 S

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मात्रा
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विस्तार मूल्य
1
US$ २७.८१
US$ २७.८१
10
US$ २६.४२
US$ २६४.२४
100
US$ २५.०३
US$ २ ५०३.२८
500
US$ २३.६४
US$ ११ ८२१.०५
1000
US$ २२.२५
US$ २२ २५१.४०
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