MJE3055T

Mfr. #: MJE3055T
निर्माता: STMicroelectronics
विवरण: TRANS NPN 60V 10A TO220AB
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: MJE3055T डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJE3055T Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 10A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 20 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 8V @ 3.3A, 10A Power-off control: 75 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 70 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 10 A Gain-Bandwidth-Product: 2 MHz This product is capable of handling a 10 A continuous collector current. Minimum hfe for DC collector-base gain is 20. 70 of 605.

MJE3055T Image

MJE3055T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE3055T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 75W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 10A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 20 @ 4A, 4V
  • Vce-Saturation-Max-Ib-Ic 8V @ 3.3A, 10A
  • Current-Collector-Cutoff-Max 700μA
  • Frequency-Transition 2MHz
  • Pd-Power-Dissipation 75 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.1 V
  • Collector-Base-Voltage-VCBO 70 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 10 A
  • Gain-Bandwidth-Product-fT 2 MHz
  • Continuous-Collector-Current 10 A
  • DC-Collector-Base-Gain-hfe-Min 20
  • DC-Current-Gain-hFE-Max 70

MJE3055T

MJE3055T Specifications

MJE3055T FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.211644 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-220AB.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 10A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 60V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 20 @ 4A, 4V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 8V @ 3.3A, 10A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 75 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 1.1 V

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 70 V

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 10 A.

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 2 MHz.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 10 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 20.

  • A: What is the DC-Current-Gain-hFE-Max of the product?

    Q: The DC-Current-Gain-hFE-Max of the product is 70.

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