LET20030C

LET20030C Overview

Product belongs to the LET20030 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M243 Si is the technology used. The device offers a 13.9 dB of 26dB. Power-off control: 108 W Maximum operating temperature of + 200 C The operating frequency is 2 GHz. This product's 80 V. The ID of continuous drain current is 160 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The transistor polarity is N-Channel.

LET20030C Image

LET20030C Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series LET20030
• Type RF Power MOSFET
• Packaging Bulk
• Mounting-Style SMD/SMT
• Package-Case M243
• Technology Si
• Gain 13.9 dB
• Output-Power 45 W
• Pd-Power-Dissipation 108 W
• Maximum-Operating-Temperature + 200 C
• Operating-Frequency 2 GHz
• Vgs-Gate-Source-Voltage 80 V
• Id-Continuous-Drain-Current 160 A
• Vds-Drain-Source-Breakdown-Voltage 75 V
• Transistor-Polarity N-Channel

LET20030C FAQ

• A: What is the Series of the product?

  Q: The Series of the product is LET20030.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: At what frequency does the Packaging?

  Q: The product Packaging is Bulk.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is M243.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Gain of the product?

  Q: The Gain of the product is 13.9 dB.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 108 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 200 C.

• A: What is the Operating-Frequency of the product?

  Q: The Operating-Frequency of the product is 2 GHz.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 80 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 160 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 75 V.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.