CSD19533KCS

CSD19533KCS Overview

Product belongs to the CSD19533KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 188 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 2 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 86 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.8 V Vgs-th gate-source threshold voltage for efficient power management. The 10.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 12 ns This product has a 7 ns. Qg-Gate-Charge is 27 nC. This product features a 115 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD19533KCS Image

CSD19533KCS Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD19533KCS
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Tradename NexFET
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 188 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 86 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Vgs-th-Gate-Source-Threshold-Voltage 2.8 V
• Rds-On-Drain-Source-Resistance 10.5 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 12 ns
• Typical-Turn-On-Delay-Time 7 ns
• Qg-Gate-Charge 27 nC
• Forward-Transconductance-Min 115 S
• Channel-Mode Enhancement

CSD19533KCS FAQ

• A: What is the Series of the product?

  Q: The Series of the product is CSD19533KCS.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.211644 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 188 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 2 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 5 ns

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 86 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.8 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 10.5 mOhms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 12 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 7 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 27 nC.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 115 S.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.