CSD17313Q2

Mfr. #: CSD17313Q2
निर्माता: Texas Instruments
विवरण: Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: CSD17313Q2 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD17313Q2 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 6-WDFN Exposed Pad Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 6-WSON (2x2) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 340pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 5A (Tc) continuous drain-ID current at 25°C; This product has an 30 mOhm @ 4A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 2.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 10 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.3 V Vgs-th gate-source threshold voltage for efficient power management. The 26 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 4.2 ns This product has a 2.8 ns. Qg-Gate-Charge is 2.1 nC. This product features a 16 S of 500 S for high performance.

CSD17313Q2 Image

CSD17313Q2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17313Q2 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 6-WDFN Exposed Pad
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 6-WSON (2x2)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 2.3W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 340pF @ 15V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 5A (Tc)
  • Rds-On-Max-Id-Vgs 30 mOhm @ 4A, 8V
  • Vgs-th-Max-Id 1.8V @ 250μA
  • Gate-Charge-Qg-Vgs 2.7nC @ 4.5V
  • Pd-Power-Dissipation 2.3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 5 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.3 V
  • Rds-On-Drain-Source-Resistance 26 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 4.2 ns
  • Typical-Turn-On-Delay-Time 2.8 ns
  • Qg-Gate-Charge 2.1 nC
  • Forward-Transconductance-Min 16 S

CSD17313Q2

CSD17313Q2 Specifications

CSD17313Q2 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 6-WDFN Exposed Pad

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 6-WSON (2x2)

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 340pF @ 15V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Logic Level Gate

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 5A (Tc)

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 30 mOhm @ 4A, 8V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2.3 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 10 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 5 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.3 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 26 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 4.2 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 2.8 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 2.1 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 16 S.

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