CSD16327

CSD16327 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1300pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 60A (Tc) continuous drain-ID current at 25°C; This product has an 4 mOhm @ 24A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 10 V. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 6.2 nC.

CSD16327 Image

CSD16327 Specifications

• Manufacturer TI
• Product Category FETs - Single
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-PowerTDFN
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package 8-VSON (3.3x3.3)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 3W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 25V
• Input-Capacitance-Ciss-Vds 1300pF @ 12.5V
• FET-Feature Logic Level Gate
• Current-Continuous-Drain-Id-25°C 60A (Tc)
• Rds-On-Max-Id-Vgs 4 mOhm @ 24A, 8V
• Vgs-th-Max-Id 1.4V @ 250μA
• Gate-Charge-Qg-Vgs 8.4nC @ 4.5V
• Pd-Power-Dissipation 3 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 10 V
• Id-Continuous-Drain-Current 21 A
• Vds-Drain-Source-Breakdown-Voltage 25 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.2 V
• Rds-On-Drain-Source-Resistance 4 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 6.2 nC

CSD16327 FAQ

• A: At what frequency does the Series?

  Q: The product Series is NexFET.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: What is the Tradename of the product?

  Q: The Tradename of the product is NexFET.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed 8-PowerTDFN

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Surface Mount

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed 8-VSON (3.3x3.3)

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 25V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 1300pF @ 12.5V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Logic Level Gate

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 60A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 4 mOhm @ 24A, 8V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 3 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 10 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 21 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.2 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 4 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 6.2 nC