| Mfr. #: | CSD13306WT |
|---|---|
| निर्माता: | Texas Instruments |
| विवरण: | MOSFET N-CH 12V 6DSBGA |
| जीवन चक्र: | यस निर्माताबाट नयाँ। |
| डाटा पाना: | CSD13306WT डाटा पाना |


Product belongs to the CSD13306W series. Reel is the packaging method for this product Weight of 0.000060 oz SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 1.9 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 3.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 700 mV Vgs-th gate-source threshold voltage for efficient power management. The 15.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 7 ns. Qg-Gate-Charge is 8.6 nC. This product features a 15 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13306WT Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed CSD13306W
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.000060 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: At what frequency does the Tradename?
Q: The product Tradename is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is DSBGA-6.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1.9 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 8 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 11 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 10 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 3.5 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 700 mV
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 15.5 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 20 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 7 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 8.6 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 15 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.