BUL39D

Mfr. #: BUL39D
निर्माता: STMicroelectronics
विवरण: Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: BUL39D डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BUL39D Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 450V DC current gain minimum (hFE) of Ic/Vce at 10 @ 10mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.1V @ 500mA, 2.5A Power-off control: 70 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 450 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 800 V voltage rating is 40 V. 9 V rating of 5 V Max DC collector current: 4 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 4.

BUL39D Image

BUL39D

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUL39D Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 70W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 450V
  • DC-Current-Gain-hFE-Min-Ic-Vce 10 @ 10mA, 5V
  • Vce-Saturation-Max-Ib-Ic 1.1V @ 500mA, 2.5A
  • Current-Collector-Cutoff-Max 100μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 70 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 450 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.1 V
  • Collector-Base-Voltage-VCBO 800 V
  • Emitter-Base-Voltage-VEBO 9 V
  • Maximum-DC-Collector-Current 4 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 4

BUL39D

BUL39D Specifications

BUL39D FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-220AB.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 4A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 450V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 10 @ 10mA, 5V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.1V @ 500mA, 2.5A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 70 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 450 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 1.1 V.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 800 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 9 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 4 A.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 4 A

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 4.

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