STP4N150

Mfr. #: STP4N150
निर्माता: STMicroelectronics
विवरण: MOSFET PowerMESH MOSFET
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STP4N150 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP4N150 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 1.5 kV 4 A continuous drain current Rds On value of 5 Ohms Gate-Source Voltage: 30 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 160 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's PowerMESH is Blue Gecko. Tube packaging for easy dispensing The height of the product is 9.15 mm. 10.4 mm long The Transistor Type is 1 N-Channel. This device belongs to the Power MOSFET type. STMicroelectronics is a trusted brand for quality electronics Minimum forward transconductance of 3.5 S 45 ns fall time MOSFET product type Rise Time is 30 ns. 1000 of 100 MOSFETs as subcategory Turn-off delay time is 45 ns. The typical turn-on delay time is 35 ns. 1. 0.011640 oz of Unit Weight

STP4N150 Image

STP4N150

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP4N150 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 1.5 kV
  • Id - Continuous Drain Current: 4 A
  • Rds On - Drain-Source Resistance: 5 Ohms
  • Vgs - Gate-Source Voltage: 30 V
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 160 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: PowerMESH
  • Packaging: Tube
  • Height: 9.15 mm
  • Length: 10.4 mm
  • Series: STP4N150
  • Transistor Type: 1 N-Channel
  • Type: Power MOSFET
  • Width: 4.6 mm
  • Brand: STMicroelectronics
  • Forward Transconductance - Min: 3.5 S
  • Fall Time: 45 ns
  • Product Type: MOSFET
  • Rise Time: 30 ns
  • Factory Pack Quantity: 1000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 45 ns
  • Typical Turn-On Delay Time: 35 ns
  • Unit Weight: 0.011640 oz

STP4N150

STP4N150 Specifications

STP4N150 FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is TO-220-3.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 1.5 kV

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 4 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 5 Ohms.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 30 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 160 W

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is PowerMESH.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Height?

    Q: The product Height is 9.15 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 10.4 mm.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 N-Channel.

  • A: At what frequency does the Type?

    Q: The product Type is Power MOSFET.

  • A: What is the Brand of the product?

    Q: The Brand of the product is STMicroelectronics.

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 3.5 S.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 45 ns

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 30 ns

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 1000

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 45 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 35 ns.

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 0.011640 oz

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मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.१२
US$ ६.१२
10
US$ ५.२०
US$ ५२.००
100
US$ ४.५१
US$ ४५१.००
250
US$ ४.२८
US$ १ ०७०.००
500
US$ ३.८४
US$ १ ९२०.००
1000
US$ ३.२४
US$ ३ २४०.००
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