STP20NM50

Mfr. #: STP20NM50
निर्माता: STMicroelectronics
विवरण: MOSFET N-Ch 500 Volt 20 Amp
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STP20NM50 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP20NM50 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 500 V 20 A continuous drain current Rds On value of 250 mOhms Gate-Source Threshold Voltage Range: 3 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 65 C. The product can operate at a maximum temperature of + 150 C. 192 W This product has a Single configuration. The Channel Mode is set to Enhancement. The height of the product is 9.15 mm. 10.4 mm long The Transistor Type is 1 N-Channel Power MOSFET. This device belongs to the MOSFET type. STMicroelectronics is a trusted brand for quality electronics Minimum forward transconductance of 10 S 12 ns fall time MOSFET product type Rise Time is 16 ns. 1000 of 100 MOSFETs as subcategory Turn-off delay time is 40 ns. The typical turn-on delay time is 24 ns. 1. 0.079014 oz of Unit Weight

STP20NM50 Image

STP20NM50

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP20NM50 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 500 V
  • Id - Continuous Drain Current: 20 A
  • Rds On - Drain-Source Resistance: 250 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 3 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 40 nC
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 192 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Height: 9.15 mm
  • Length: 10.4 mm
  • Series: STP20NM50
  • Transistor Type: 1 N-Channel Power MOSFET
  • Type: MOSFET
  • Width: 4.6 mm
  • Brand: STMicroelectronics
  • Forward Transconductance - Min: 10 S
  • Fall Time: 12 ns
  • Product Type: MOSFET
  • Rise Time: 16 ns
  • Factory Pack Quantity: 1000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 40 ns
  • Typical Turn-On Delay Time: 24 ns
  • Unit Weight: 0.079014 oz

STP20NM50

STP20NM50 Specifications

STP20NM50 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-220-3.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 1 Channel

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 500 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 20 A.

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 250 mOhms

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 3 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 65 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 192 W

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 9.15 mm

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 10.4 mm

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 N-Channel Power MOSFET.

  • A: What is the Type of the product?

    Q: The Type of the product is MOSFET.

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: At what frequency does the Forward Transconductance - Min?

    Q: The product Forward Transconductance - Min is 10 S.

  • A: What is the Fall Time of the product?

    Q: The Fall Time of the product is 12 ns.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 16 ns

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 1000

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 40 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 24 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.079014 oz.

953 In Stock
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मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.६८
US$ ३.६८
10
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100
US$ २.७१
US$ २७१.००
250
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US$ ६४२.५०
500
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US$ १ १५५.००
1000
US$ १.९४
US$ १ ९४०.००
2000
US$ १.८५
US$ ३ ७००.००
5000
US$ १.७८
US$ ८ ९००.००
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