STGWA80H65DFB

Mfr. #: STGWA80H65DFB
निर्माता: STMicroelectronics
विवरण: IGBT Transistors IGBT & Power Bipolar
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: STGWA80H65DFB डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.3 mm. 20.3 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGWA80H65DFB Image

STGWA80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA80H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 2 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Pd - Power Dissipation: 469 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA80H65DFB
  • Continuous Collector Current Ic Max: 80 A
  • Height: 5.3 mm
  • Length: 20.3 mm
  • Operating Temperature Range: - 55 C to + 175 C
  • Width: 15.9 mm
  • Brand: STMicroelectronics
  • Continuous Collector Current: 120 A
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGWA80H65DFB

STGWA80H65DFB Specifications

STGWA80H65DFB FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is STMicroelectronics.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-247-3

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Collector- Emitter Voltage VCEO Max?

    Q: The product Collector- Emitter Voltage VCEO Max is 650 V.

  • A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

    Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 2 V

  • A: What is the Maximum Gate Emitter Voltage of the product?

    Q: The Maximum Gate Emitter Voltage of the product is 20 V.

  • A: At what frequency does the Continuous Collector Current at 25 C?

    Q: The product Continuous Collector Current at 25 C is 120 A.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 469 W.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 175 C.

  • A: What is the Continuous Collector Current Ic Max of the product?

    Q: The Continuous Collector Current Ic Max of the product is 80 A.

  • A: At what frequency does the Height?

    Q: The product Height is 5.3 mm.

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 20.3 mm

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: Is the cutoff frequency of the product Gate-Emitter Leakage Current?

    Q: Yes, the product's Gate-Emitter Leakage Current is indeed 250 nA

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is IGBT Transistors.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 600

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed IGBTs

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 1.340411 oz.

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