STGP30H65F

STGP30H65F Overview

This product is manufactured by STMicroelectronics. TO-220-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2.4 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 260 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 30 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 1000 of 100 IGBTs as subcategory 1. 0.211644 oz of Unit Weight

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STGP30H65F Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-220-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 2.4 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 60 A
• Pd - Power Dissipation: 260 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGP30H65F
• Packaging: Tube
• Continuous Collector Current Ic Max: 30 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 1000
• Subcategory: IGBTs
• Unit Weight: 0.211644 oz

STGP30H65F FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is STMicroelectronics.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed TO-220-3

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is Through Hole.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

• A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

  Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 2.4 V

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 60 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 260 W.

• A: At what frequency does the Minimum Operating Temperature?

  Q: The product Minimum Operating Temperature is - 55 C.

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 175 C.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

  Q: Yes, the product's Continuous Collector Current Ic Max is indeed 30 A

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 1000.

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed IGBTs

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.211644 oz.