MRF085HR5

MRF085HR5 Overview

This product is manufactured by NXP. 210 mA continuous drain current Vds rating of - 500 mV, 133 V 25.6 dB is 11.5 dB. Output power: 85 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-650H-4 package/case type is utilized by this product. Reel packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 235 W RF MOSFET Transistors product type 50 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.5 V This product is also known by the 935351494178 number of 934069005115. 1. 0 oz of Unit Weight

MRF085HR5 Image

MRF085HR5 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: Dual N-Channel
• Technology: Si
• Id - Continuous Drain Current: 210 mA
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 133 V
• Gain: 25.6 dB
• Output Power: 85 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-650H-4
• Packaging: Reel
• Operating Frequency: 1.8 MHz to 1215 MHz
• Series: MRF085H
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 235 W
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 50
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.5 V
• Part # Aliases: 935351494178
• Unit Weight: 0 oz

MRF085HR5 FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is NXP.

• A: At what frequency does the Id - Continuous Drain Current?

  Q: The product Id - Continuous Drain Current is 210 mA.

• A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

  Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 133 V.

• A: What is the Gain of the product?

  Q: The Gain of the product is 25.6 dB.

• A: Is the cutoff frequency of the product Output Power?

  Q: Yes, the product's Output Power is indeed 85 W

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 40 C.

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 150 C.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is SMD/SMT.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is NI-650H-4.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: At what frequency does the Type?

  Q: The product Type is RF Power MOSFET.

• A: What is the Brand of the product?

  Q: The Brand of the product is NXP Semiconductors.

• A: At what frequency does the Number of Channels?

  Q: The product Number of Channels is 2 Channel.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 235 W.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed RF MOSFET Transistors

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 50

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed MOSFETs

• A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

  Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, 10 V

• A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

  Q: The product Vgs th - Gate-Source Threshold Voltage is 1.5 V.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 935351494178.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0 oz.