CSD85312Q3E

Mfr. #: CSD85312Q3E
निर्माता: Texas Instruments
विवरण: MOSFET Dual 20V N-CH Pwr MOSFETs
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: CSD85312Q3E डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD85312Q3E Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 20 V 12 A continuous drain current Rds On value of 14 mOhms Gate-Source Threshold Voltage Range: 1.1 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.5 W This product has a Dual configuration. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 2 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 99 S 6 ns fall time MOSFET product type Rise Time is 27 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 24 ns. The typical turn-on delay time is 11 ns. 1. 0.001129 oz of Unit Weight

CSD85312Q3E Image

CSD85312Q3E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD85312Q3E Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 20 V
  • Id - Continuous Drain Current: 12 A
  • Rds On - Drain-Source Resistance: 14 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 1.1 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 11.7 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.5 W
  • Configuration: Dual
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD85312Q3E
  • Transistor Type: 2 N-Channel
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 99 S
  • Fall Time: 6 ns
  • Product Type: MOSFET
  • Rise Time: 27 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 24 ns
  • Typical Turn-On Delay Time: 11 ns
  • Unit Weight: 0.001129 oz

CSD85312Q3E

CSD85312Q3E Specifications

CSD85312Q3E FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is VSON-8.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 20 V

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 12 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 14 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 1.1 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 2.5 W.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 3.3 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 2 N-Channel.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 99 S.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 6 ns

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 27 ns.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 2500.

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 24 ns

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 11 ns.

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 0.001129 oz

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