CSD17308Q3

Mfr. #: CSD17308Q3
निर्माता: Texas Instruments
विवरण: MOSFET 30V NCh NexFET Pwr MOSFET
जीवन चक्र: यस निर्माताबाट नयाँ।
डाटा पाना: CSD17308Q3 डाटा पाना
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD17308Q3 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-Clip-8 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 30 V 50 A continuous drain current Rds On value of 10.3 mOhms Gate-Source Threshold Voltage Range: 900 mV Gate-Source Voltage: 8 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 28 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 1 N-Channel Power MOSFET. Texas Instruments is a trusted brand for quality electronics BQ500211AEVM-210 is a versatile development platform for hardware and software 2.3 ns fall time MOSFET product type Rise Time is 5.7 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 9.9 ns. The typical turn-on delay time is 4.5 ns. 1. 0.001446 oz of Unit Weight

CSD17308Q3 Image

CSD17308Q3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17308Q3 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-Clip-8
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 30 V
  • Id - Continuous Drain Current: 50 A
  • Rds On - Drain-Source Resistance: 10.3 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 900 mV
  • Vgs - Gate-Source Voltage: 8 V
  • Qg - Gate Charge: 3.9 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 28 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD17308Q3
  • Transistor Type: 1 N-Channel Power MOSFET
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Development Kit: BQ500211AEVM-210
  • Fall Time: 2.3 ns
  • Product Type: MOSFET
  • Rise Time: 5.7 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 9.9 ns
  • Typical Turn-On Delay Time: 4.5 ns
  • Unit Weight: 0.001446 oz

CSD17308Q3

CSD17308Q3 Specifications

CSD17308Q3 FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is Texas Instruments.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is VSON-Clip-8.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 1 Channel

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 30 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 50 A.

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 10.3 mOhms

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 900 mV

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 8 V

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 28 W

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Channel Mode?

    Q: The product Channel Mode is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1 mm.

  • A: At what frequency does the Length?

    Q: The product Length is 3.3 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 N-Channel Power MOSFET.

  • A: At what frequency does the Brand?

    Q: The product Brand is Texas Instruments.

  • A: At what frequency does the Development Kit?

    Q: The product Development Kit is BQ500211AEVM-210.

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 2.3 ns.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 5.7 ns

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 2500.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 9.9 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 4.5 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.001446 oz.

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