BFU730F,115

BFU730F,115 Overview

This product is manufactured by NXP. The Transistor Type is Bipolar. The 205. The maximum 2.8 V. The product can operate at a maximum temperature of SMD/SMT. SOT343F-4 package/case type is utilized by this product. Reel packaging for easy dispensing Maximum DC Current Gain hFE: 555 The height of the product is 0.75 mm. 2.2 mm long This device belongs to the RF Silicon Germanium type. NXP Semiconductors is a trusted brand for quality electronics 197 mW RF Bipolar Transistors product type 3000 of 100 Transistors as subcategory This product is also known by the 934064614115 number of 934069005115. 1. 0.000235 oz of Unit Weight

BFU730F,115 Image

BFU730F,115 Specifications

• Manufacturer: NXP
• Product Category: RF Bipolar Transistors
• RoHS: Y
• Transistor Type: Bipolar
• Technology: SiGe
• DC Collector/Base Gain hfe Min: 205
• Collector- Emitter Voltage VCEO Max: 2.8 V
• Emitter- Base Voltage VEBO: 1 V
• Continuous Collector Current: 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT343F-4
• Packaging: Reel
• Collector- Base Voltage VCBO: 10 V
• DC Current Gain hFE Max: 555
• Height: 0.75 mm
• Length: 2.2 mm
• Operating Frequency: 55 GHz
• Type: RF Silicon Germanium
• Width: 1.35 mm
• Brand: NXP Semiconductors
• Pd - Power Dissipation: 197 mW
• Product Type: RF Bipolar Transistors
• Factory Pack Quantity: 3000
• Subcategory: Transistors
• Part # Aliases: 934064614115
• Unit Weight: 0.000235 oz

BFU730F,115 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: Is the cutoff frequency of the product Transistor Type?

  Q: Yes, the product's Transistor Type is indeed Bipolar

• A: At what frequency does the DC Collector/Base Gain hfe Min?

  Q: The product DC Collector/Base Gain hfe Min is 205.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 2.8 V

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is SMD/SMT.

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is SOT343F-4.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: Is the cutoff frequency of the product DC Current Gain hFE Max?

  Q: Yes, the product's DC Current Gain hFE Max is indeed 555

• A: At what frequency does the Height?

  Q: The product Height is 0.75 mm.

• A: At what frequency does the Length?

  Q: The product Length is 2.2 mm.

• A: What is the Type of the product?

  Q: The Type of the product is RF Silicon Germanium.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed NXP Semiconductors

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 197 mW.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed RF Bipolar Transistors

• A: At what frequency does the Factory Pack Quantity?

  Q: The product Factory Pack Quantity is 3000.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is Transistors.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 934064614115.

• A: Is the cutoff frequency of the product Unit Weight?

  Q: Yes, the product's Unit Weight is indeed 0.000235 oz