SI5517DU-T1-GE3

Mfr. #:: SI5517DU-T1-GE3
निर्माता:: Vishay
विवरण:: MOSFET N/P-CH 20V 6A CHIPFET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI5517DU-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI5517DU-GE3

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: PowerPAKR ChipFET डुअल

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: PowerPAKR ChipFet डुअल

कन्फिगरेसन: 1 N-Channel 1 P-Channel

FET-प्रकार: N र P- च्यानल

पावर-अधिकतम: 8.3W

ट्रान्जिस्टर-प्रकार: 1 N-Channel 1 P-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 20V

इनपुट-Capacitance-Ciss-Vds: 520pF @ 10V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 6A

Rds-on-max-Id-Vgs: 39 mOhm @ 4.4A, 4.5V

Vgs-th-max-Id: 1V @ 250μA

गेट-चार्ज-Qg-Vgs: 16nC @ 8V

Pd-शक्ति-डिसिपेशन: 2.3 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 10 ns 55 ns

उदय-समय: 65 ns 35 ns

Vgs-गेट-स्रोत-भोल्टेज: 8 V

आईडी-निरन्तर-नाली-वर्तमान: 7.2 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 20 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 32 mOhms 60 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल P- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 40 ns 40 ns

सामान्य-टर्न-अन-डिले-समय: 20 ns 8 ns

च्यानल-मोड: वृद्धि

Tags: SI5517, SI551, SI55, SI5

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5517DU-T1-GE3 विवरण

***p One Stop Global: Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R

***Components: On a Reel of 3000, Dual N/P-Channel-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay SI5517DU-T1-GE3

***ure Electronics: MOSFET 20V 6.0A 8.3W 39/72mohm @ 4.5V

***ied Electronics & Automation: Trans MOSFET N/P-CH 20V 7.2A/4.6

***i-Key: MOSFET N/P-CH 20V 6A CHIPFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:PowerPAK ChipFET Dual; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI5517DU-T1-GE3 DISTI # V36:1790_09216229	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # V72:2272_09216229	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	10	10:$0.7040 1:$0.9199
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5739In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5739In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.5236
SI5517DU-T1-GE3 DISTI # 30306435	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.4282 6000:$0.3294 9000:$0.2621 15000:$0.2215 30000:$0.2039 75000:$0.1976 150000:$0.1917
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5517DU-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI5517DU-T1-GE3 DISTI # SI5517DU-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.8369 6000:€0.6009 12000:€0.4869 18000:€0.4309 30000:€0.4119
SI5517DU-T1-GE3 DISTI # 16P3788	Vishay Intertechnologies	DUAL N/P CH MOSFET, 20V, POWERPAK, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):32mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.4770 3000:$0.4740 6000:$0.4510 12000:$0.4000
SI5517DU-T1-GE3 DISTI # 09X6441	Vishay Intertechnologies	MOSFET, N & P CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$0.9320 10:$0.9030 100:$0.7120 250:$0.6770 500:$0.6320 1000:$0.5060
SI5517DU-T1-GE3 DISTI # 70616987	Vishay Siliconix	Trans MOSFET N/P-CH 20V 7.2A/4.6 RoHS: Compliant	0	300:$0.7700 600:$0.6500 1500:$0.5700 3000:$0.5400
SI5517DU-T1-GE3 DISTI # 781-SI5517DU-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs PowerPAK ChipFET RoHS: Compliant	3065	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI5517DU-T1-GE3 DISTI # 8181334P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 20V 7.2A/4.6, RL	3160	200:£0.2510
SI5517DUT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 6000
SI5517DU-T1-GE3 DISTI # C1S803601298171	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	3000	3000:$0.4654
SI5517DU-T1-GE3 DISTI # C1S806001096569	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R RoHS: Compliant	10	10:$0.7967

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI5517DU-T1-GE3 OMO.#: OMO-SI5517DU-T1-GE3	MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
	Mfr.#: SI5517DU-T1-E3 OMO.#: OMO-SI5517DU-T1-E3-VISHAY	MOSFET N/P-CH 20V 6A CHIPFET
	Mfr.#: SI5517DU-T1-GE3 OMO.#: OMO-SI5517DU-T1-GE3-VISHAY	MOSFET N/P-CH 20V 6A CHIPFET
	Mfr.#: SI5517DU-T1-GE3DKR-ND OMO.#: OMO-SI5517DU-T1-GE3DKR-ND-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 3500
मात्रा प्रविष्ट गर्नुहोस्:

SI5517DU-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.६४~~; ~~US$ ०.६४~~

10: ~~US$ ०.६०~~; ~~US$ ६.०३~~

100: ~~US$ ०.५७~~; ~~US$ ५७.१५~~

500: ~~US$ ०.५४~~; ~~US$ २६९.८५~~

1000: ~~US$ ०.५१~~; ~~US$ ५०८.००~~

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बाट सुरु गर्नुहोस्

SI5517 3
SI551 30
SI55 57
SI5 8250

SI5517DU-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes