RF1S23N06LE

RF1S23N06LE
Mfr. #:
RF1S23N06LE
निर्माता:
Rochester Electronics, LLC
विवरण:
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RF1S23N06LE डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
RF1S2, RF1S, RF1
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
RF1S23N06LEHarris SemiconductorPower Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant
2400
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
RF1S23N06LESMHarris SemiconductorPower Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
5549
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
RF1S23N06LESM9AHarris SemiconductorPower Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
800
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
छवि भाग # विवरण
RF1S22N10SM

Mfr.#: RF1S22N10SM

OMO.#: OMO-RF1S22N10SM-1190

Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S22N10SM9A

Mfr.#: RF1S22N10SM9A

OMO.#: OMO-RF1S22N10SM9A-1190

MOSFET 100V Single
RF1S23N06LE

Mfr.#: RF1S23N06LE

OMO.#: OMO-RF1S23N06LE-1190

Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S23N06LESM

Mfr.#: RF1S23N06LESM

OMO.#: OMO-RF1S23N06LESM-1190

Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06

Mfr.#: RF1S25N06

OMO.#: OMO-RF1S25N06-1190

- Bulk (Alt: RF1S25N06)
RF1S25N06S3S

Mfr.#: RF1S25N06S3S

OMO.#: OMO-RF1S25N06S3S-1190

नयाँ र मौलिक
RF1S25N06SM

Mfr.#: RF1S25N06SM

OMO.#: OMO-RF1S25N06SM-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SM9A

Mfr.#: RF1S25N06SM9A

OMO.#: OMO-RF1S25N06SM9A-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SMR4643

Mfr.#: RF1S25N06SMR4643

OMO.#: OMO-RF1S25N06SMR4643-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
RF1S23N06LE को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
US$ ०.००
10
US$ ०.००
US$ ०.००
100
US$ ०.००
US$ ०.००
500
US$ ०.००
US$ ०.००
1000
US$ ०.००
US$ ०.००
बाट सुरु गर्नुहोस्
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