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SI4427BDY-T1-GE3

SI4427BDY-T1-GE3
Mfr. #:
SI4427BDY-T1-GE3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4427BDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4427BDY-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SI4427BDY-T, SI4427B, SI4427, SI442, SI44, SI4
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 0.0195 Ohm 70 nC 1.5 W Silicon SMT Mosfet - SOIC-8
***et
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -30V, 12.6A, SOIC
***ark
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-12.6A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:-2.5V; Threshold Voltage, Vgs Typ:-1.4V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4427BDY-T1-GE3
DISTI # V72:2272_09216487		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant		4882
  • 3000:$0.6284
  • 1000:$0.6719
  • 500:$0.8261
  • 250:$0.9439
  • 100:$0.9542
  • 25:$1.1855
  • 10:$1.1996
  • 1:$1.4064
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4985In Stock
  • 1000:$0.9693
  • 500:$1.1698
  • 100:$1.5041
  • 10:$1.8720
  • 1:$2.0700
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4985In Stock
  • 1000:$0.9693
  • 500:$1.1698
  • 100:$1.5041
  • 10:$1.8720
  • 1:$2.0700
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.8761
SI4427BDY-T1-GE3
DISTI # 27510656		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant		4882
  • 3000:$0.6284
  • 1000:$0.6719
  • 500:$0.8261
  • 250:$0.9439
  • 100:$0.9542
  • 25:$1.1855
  • 10:$1.1996
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4427BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7159
  • 5000:$0.6949
  • 10000:$0.6659
  • 15000:$0.6479
  • 25000:$0.6309
SI4427BDY-T1-GE3
DISTI # 15R5013		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-12.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-2.5V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.8090
  • 2500:$0.8030
  • 5000:$0.7790
  • 10000:$0.7500
SI4427BDY-T1-GE3
DISTI # 26R1876		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes0
  • 1:$1.7300
  • 10:$1.4200
  • 25:$1.3100
  • 50:$1.2000
  • 100:$1.0900
  • 250:$1.0100
  • 500:$0.9360
SI4427BDY-T1-GE3
DISTI # 781-SI4427BDY-GE3		Vishay IntertechnologiesMOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
RoHS: Compliant		1466
  • 1:$1.7300
  • 10:$1.4200
  • 100:$1.0900
  • 500:$0.9360
  • 1000:$0.7390
  • 2500:$0.6900
SI4427BDY-T1-GE3.
DISTI # 2118917		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC
RoHS: Compliant		0
  • 2500:£0.8220
SI4427BDY-T1-GE3
DISTI # C1S803601998828		Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant		4882
  • 250:$0.8580
  • 100:$0.9534
  • 25:$1.0778
  • 10:$1.1975
SI4427BDY-T1-GE3..
DISTI # 8156751		Vishay Intertechnologies 
RoHS: Compliant		0
  • 1:$2.7500
  • 10:$2.2500
  • 100:$1.7300
  • 500:$1.4900
  • 1000:$1.1700
  • 2500:$1.1000
छवि भाग # विवरण
SI4427BDY-T1-E3

Mfr.#: SI4427BDY-T1-E3

OMO.#: OMO-SI4427BDY-T1-E3

 MOSFET 30V 13.3A 3W
SI4427BDY-T1-GE3

Mfr.#: SI4427BDY-T1-GE3

OMO.#: OMO-SI4427BDY-T1-GE3

 MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
SI4427BDY-T1-GE3

Mfr.#: SI4427BDY-T1-GE3

OMO.#: OMO-SI4427BDY-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
SI4427BDY-T1-E3-CUT TAPE

Mfr.#: SI4427BDY-T1-E3-CUT TAPE

OMO.#: OMO-SI4427BDY-T1-E3-CUT-TAPE-1190

 नयाँ र मौलिक
SI4427BDY

Mfr.#: SI4427BDY

OMO.#: OMO-SI4427BDY-1190

 नयाँ र मौलिक
SI4427BDY-T1-E3

Mfr.#: SI4427BDY-T1-E3

OMO.#: OMO-SI4427BDY-T1-E3-VISHAY

 MOSFET P-CH 30V 9.7A 8-SOIC
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
SI4427BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.९४
US$ ०.९४
10
US$ ०.९०
US$ ८.९६
100
US$ ०.८५
US$ ८४.८३
500
US$ ०.८०
US$ ४००.६०
1000
US$ ०.७५
US$ ७५४.१०
बाट सुरु गर्नुहोस्
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