TGF2929-HM

TGF2929-HM
Mfr. #:
TGF2929-HM
निर्माता:
Qorvo
विवरण:
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TGF2929-HM डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
TGF2929-HM थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
कोर्भो
उत्पादन कोटि:
आरएफ JFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर प्रकार:
HEMT
प्रविधि:
GaN SiC
पाउनु:
17.4 dB
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
50 V
Vgs - गेट-स्रोत ब्रेकडाउन भोल्टेज:
- 2.8 V
आईडी - निरन्तर ड्रेन वर्तमान:
7.2 A
आउटपुट पावर:
132 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 85 C
Pd - शक्ति अपव्यय:
140 W
माउन्टिङ शैली:
SMD/SMT
प्याकेजिङ:
वाफल
कन्फिगरेसन:
एकल
सञ्चालन आवृत्ति:
DC to 3.5 GHz
सञ्चालन तापमान दायरा:
- 40 C to + 85 C
शृङ्खला:
TGF
ब्रान्ड:
कोर्भो
विकास किट:
TGF2929-HM EVB1
नमी संवेदनशील:
हो
उत्पादन प्रकार:
आरएफ JFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
25
उपश्रेणी:
ट्रान्जिस्टरहरू
भाग # उपनाम:
1135635
Tags
TGF292, TGF29, TGF2, TGF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic
***hardson RFPD
RF POWER TRANSISTOR
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
भाग # Mfg। विवरण स्टक मूल्य
TGF2929-HM
DISTI # 772-TGF2929-HM
QorvoRF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
RoHS: Compliant
0
  • 25:$338.4400
TGF2929-HM-EVB
DISTI # 772-TGF2929-HM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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उपलब्धता
स्टक:
25
अर्डर मा:
2008
मात्रा प्रविष्ट गर्नुहोस्:
TGF2929-HM को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
25
US$ ३३८.४४
US$ ८ ४६१.००
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