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TH58BVG2S3HTAI0

TH58BVG2S3HTAI0
Mfr. #:
TH58BVG2S3HTAI0
निर्माता:
Toshiba Memory
विवरण:
EEPROM 4 Gbit CMOS NAND EEPROM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TH58BVG2S3HTAI0 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
TH58BVG2S3HTAI0 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
तोशिबा सेमीकन्डक्टर र भण्डारण
उत्पादन कोटि
मेमोरी
शृङ्खला
बेनन्द
प्याकेजिङ
ट्रे
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TSOP-48
सञ्चालन - तापक्रम
-40°C ~ 85°C (TA)
इन्टरफेस
समानान्तर
भोल्टेज - आपूर्ति
2.7 V ~ 3.6 V
आपूर्तिकर्ता-उपकरण-प्याकेज
48-TSOP I
मेमोरी साइज
4G (512M x 8)
मेमोरी-प्रकार
EEPROM - नन्द
गति
25ns
पहुँच-समय
25 ns
ढाँचा- मेमोरी
EEPROMs - क्रमिक
अधिकतम-सञ्चालन-तापमान
+ 85 C
न्यूनतम-सञ्चालन-तापमान
- 40 C
सञ्चालन-सप्लाई-भोल्टेज
3.3 V
इन्टरफेस-प्रकार
समानान्तर
संगठन
512 M x 8
आपूर्ति-भोल्टेज-अधिकतम
3.6 V
आपूर्ति-भोल्टेज-मिनट
2.7 V
Tags
TH58BVG2S3HTAI, TH58BVG2S3HT, TH58BVG2, TH58BV, TH58B, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**h
    E**h
    ES

    All good

    2019-05-05
    M***d
    M***d
    US

    There is excessive leakage current on the Boot0 pin of the STM32 chip, so module would not enter serial boot mode. Changed R3 from 100k to 10k and now serial boot is working. Both modules had the same problem. Everything else functioning OK so far.

    2019-08-01
***et
SLC NAND Flash Parallel 3.3V 4Gbit 512M X 8bit 25ns 48-Pin TSOP-I Tray
***ical
SLC NAND Flash 3.3V 4G-bit 48-Pin TSOP
***ronik
BENAND-Flash 512Mx8 3.3V TSOP48
***i-Key
IC FLASH 4G PARALLEL 48TSOP I
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
भाग # Mfg। विवरण स्टक मूल्य
TH58BVG2S3HTAI0
DISTI # TH58BVG2S3HTAI0-ND		Toshiba Semiconductor and Storage ProductsIC FLASH 4G PARALLEL 48TSOP I
RoHS: Compliant
Min Qty: 1
Container: Tray		182In Stock
  • 1056:$4.5407
  • 576:$4.7425
  • 288:$5.0583
  • 192:$5.0778
  • 96:$5.6604
  • 25:$5.6996
  • 10:$5.8100
  • 1:$6.3700
TH58BVG2S3HTAI0
DISTI # TH58BVG2S3HTAI0		Toshiba America Electronic ComponentsSLC NAND Flash Parallel 3.3V 4Gbit 512M X 8bit 25ns 48-Pin TSOP-I Tray - Trays (Alt: TH58BVG2S3HTAI0)
RoHS: Compliant
Min Qty: 96
Container: Tray		Americas - 0
  • 96:$4.7900
  • 192:$4.6900
  • 384:$4.5900
  • 576:$4.5900
  • 960:$4.3900
TH58BVG2S3HTAI0
DISTI # 757-TH58BVG2S3HTAI0		Toshiba America Electronic ComponentsNAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant		0
  • 1:$7.7500
  • 10:$6.9800
  • 25:$6.3600
  • 100:$5.7400
  • 250:$5.2800
  • 500:$4.8100
  • 1000:$4.1900
छवि भाग # विवरण
TH58BVG2S3HTAI0

Mfr.#: TH58BVG2S3HTAI0

OMO.#: OMO-TH58BVG2S3HTAI0

 NAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM)
TH58BVG2S3HBAI6

Mfr.#: TH58BVG2S3HBAI6

OMO.#: OMO-TH58BVG2S3HBAI6

 NAND Flash 4Gb 24nm SLC NAND (EEPROM)
TH58BVG2S3HTAI0

Mfr.#: TH58BVG2S3HTAI0

OMO.#: OMO-TH58BVG2S3HTAI0-TOSHIBA-MEMORY-AMERICA

 EEPROM 4 Gbit CMOS NAND EEPROM
TH58BVG2S3HTA00

Mfr.#: TH58BVG2S3HTA00

OMO.#: OMO-TH58BVG2S3HTA00-TOSHIBA-MEMORY-AMERICA

 EEPROM 4 Gbit CMOS NAND EEPROM
TH58BVG3S0HTAI0

Mfr.#: TH58BVG3S0HTAI0

OMO.#: OMO-TH58BVG3S0HTAI0-TOSHIBA-MEMORY-AMERICA

 Flash Memory 8 GBIT CMOS NAND EEPROM
TH58BVG3S0HTAI0B4H

Mfr.#: TH58BVG3S0HTAI0B4H

OMO.#: OMO-TH58BVG3S0HTAI0B4H-1190

 TOSTH58BVG3S0HTAI0B4H 8 GBIT (1G × 8 BIT (Alt: TH58BVG3S0HTAI0B4H)
TH58BVG2S3HTA00(B4H)

Mfr.#: TH58BVG2S3HTA00(B4H)

OMO.#: OMO-TH58BVG2S3HTA00-B4H--1190

 नयाँ र मौलिक
TH58BVG2S3HTA00_REEL

Mfr.#: TH58BVG2S3HTA00_REEL

OMO.#: OMO-TH58BVG2S3HTA00-REEL-1151

 NAND Flash Memory (Alt: TH58BVG2S3HTA00_REEL)
TH58BVG3S0HBAI4

Mfr.#: TH58BVG3S0HBAI4

OMO.#: OMO-TH58BVG3S0HBAI4-1190

 नयाँ र मौलिक
TH58BVG2S3HTA00-ND

Mfr.#: TH58BVG2S3HTA00-ND

OMO.#: OMO-TH58BVG2S3HTA00-ND-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
TH58BVG2S3HTAI0 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.२८
US$ ६.२८
10
US$ ५.९७
US$ ५९.७१
100
US$ ५.६६
US$ ५६५.६५
500
US$ ५.३४
US$ २ ६७१.१५
1000
US$ ५.०३
US$ ५ ०२८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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