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SI3585CDV-T1-GE3

SI3585CDV-T1-GE3
Mfr. #:
SI3585CDV-T1-GE3
निर्माता:
Vishay
विवरण:
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3585CDV-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI3585CDV-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI3585CDV-GE3
एकाइ - वजन
0.000705 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOT-23-6 Thin, TSOT-23-6
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
6-TSOP
कन्फिगरेसन
1 N-Channel 1 P-Channel
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
1.4W, 1.3W
ट्रान्जिस्टर-प्रकार
1 N-Channel 1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
150pF @ 10V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
3.9A, 2.1A
Rds-on-max-Id-Vgs
58 mOhm @ 2.5A, 4.5V
Vgs-th-max-Id
1.5V @ 250μA
गेट-चार्ज-Qg-Vgs
4.8nC @ 10V
Pd-शक्ति-डिसिपेशन
1.4 W 1.3 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
8 ns 7 ns
उदय-समय
20 ns 10 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
3.9 A - 2.1 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
20 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
1.5 V - 1.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
58 mOhms 195 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
11 ns 13 ns
सामान्य-टर्न-अन-डिले-समय
5 ns 3 ns
Qg-गेट-चार्ज
3.2 nC 6 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
12 S 1 S
Tags
SI3585CDV-T, SI3585C, SI3585, SI358, SI35, SI3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
भाग # Mfg। विवरण स्टक मूल्य
SI3585CDV-T1-GE3
DISTI # V72:2272_09216703		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 25:$0.3124
  • 10:$0.3163
  • 1:$0.3860
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.2046
SI3585CDV-T1-GE3
DISTI # 31154779		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 48:$0.3124
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.3089
    • 6000:€0.2109
    • 12000:€0.1809
    • 18000:€0.1669
    • 30000:€0.1559
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3585CDV-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1609
    • 6000:$0.1559
    • 12000:$0.1499
    • 18000:$0.1459
    • 30000:$0.1419
    SI3585CDV-T1-GE3
    DISTI # 70AC6501    		Vishay Intertechnologies 0
    • 1:$0.6500
    • 25:$0.5440
    • 50:$0.4760
    • 100:$0.4070
    • 250:$0.3530
    • 500:$0.2990
    • 1000:$0.2310
    SI3585CDV-T1-GE3
    DISTI # 99W9612    		Vishay IntertechnologiesDual MOSFET, N and P Channel, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V0
    • 1:$0.1760
    • 3000:$0.1740
    • 6000:$0.1660
    SI3585CDV-T1-GE3
    DISTI # 78-SI3585CDV-T1-GE3    		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant    		378
    • 1:$0.5700
    • 10:$0.4340
    • 100:$0.3220
    • 500:$0.2650
    • 1000:$0.2050
    • 3000:$0.2000
    SI3585CDV-T1-GE3
    DISTI # 2454805RL    		Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant    		0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805    		Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant    		0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805    		Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant    		0
    • 5:£0.4650
    • 25:£0.4380
    • 100:£0.3050
    SI3585CDV-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant    		Americas -
    • 3000:$0.1570
    • 6000:$0.1480
    • 12000:$0.1440
    • 24000:$0.1420
    छवि भाग # विवरण
    SI3585CDV-T1-GE3

    Mfr.#: SI3585CDV-T1-GE3

    OMO.#: OMO-SI3585CDV-T1-GE3

    		 MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    SI3585CDV

    Mfr.#: SI3585CDV

    OMO.#: OMO-SI3585CDV-1190

    		 नयाँ र मौलिक
    SI3585CDV-T1-E3

    Mfr.#: SI3585CDV-T1-E3

    OMO.#: OMO-SI3585CDV-T1-E3-1190

    		 नयाँ र मौलिक
    SI3585CDV-T1-GE3-CUT TAPE

    Mfr.#: SI3585CDV-T1-GE3-CUT TAPE

    OMO.#: OMO-SI3585CDV-T1-GE3-CUT-TAPE-1190

    		 नयाँ र मौलिक
    SI3585CDV-T1-GE3

    Mfr.#: SI3585CDV-T1-GE3

    OMO.#: OMO-SI3585CDV-T1-GE3-VISHAY

    		 Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4500
    मात्रा प्रविष्ट गर्नुहोस्:
    SI3585CDV-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.१९
    US$ ०.१९
    10
    US$ ०.१८
    US$ १.८०
    100
    US$ ०.१७
    US$ १७.०१
    500
    US$ ०.१६
    US$ ८०.३५
    1000
    US$ ०.१५
    US$ १५१.२०
    बाट सुरु गर्नुहोस्
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