SI4166DY-T1-GE3

SI4166DY-T1-GE3
Mfr. #:
SI4166DY-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V 30.5A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4166DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4166DY-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI4166DY-GE3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOIC-Narrow-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल क्वाड ड्रेन ट्रिपल स्रोत
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
3 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
15 ns
उदय-समय
19 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
20.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
4.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
35 ns
सामान्य-टर्न-अन-डिले-समय
30 ns
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
65 S
च्यानल-मोड
वृद्धि
Tags
SI4166DY-T, SI4166D, SI4166, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1130In Stock
  • 1000:$0.7138
  • 500:$0.9041
  • 100:$1.1659
  • 10:$1.4750
  • 1:$1.6700
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 30.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6468
SI4166DY-T1-GE3
DISTI # SI4166DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.6329
    • 5000:$0.6319
    • 10000:$0.6299
    • 15000:$0.6279
    • 25000:$0.6269
    SI4166DY-T1-GE3
    DISTI # SI4166DY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 2500:€0.6869
    • 5000:€0.4689
    • 10000:€0.4029
    • 15000:€0.3719
    • 25000:€0.3469
    SI4166DY-T1-GE3
    DISTI # 85W3205
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3205)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$0.7990
    SI4166DY-T1-GE3
    DISTI # 97W2647
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power , RoHS Compliant: Yes2250
    • 1:$1.4700
    • 10:$1.2100
    • 25:$1.1200
    • 50:$1.0200
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7010
    SI4166DY-T1-GE3
    DISTI # 781-SI4166DY-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant
    4268
    • 1:$1.4700
    • 10:$1.2100
    • 100:$0.9290
    • 500:$0.7990
    • 1000:$0.7560
    • 2500:$0.7000
    SI4166DY-T1-GE3
    DISTI # 2335305
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant
    2250
    • 1:$2.3400
    • 10:$1.9200
    • 100:$1.4700
    • 500:$1.2600
    • 1000:$1.1200
    • 2500:$1.1100
    SI4166DY-T1-GE3
    DISTI # 2335305
    Vishay IntertechnologiesMOSFET, N CH, 30V, 30.5A, SOIC
    RoHS: Compliant
    4741
    • 5:£1.1300
    • 25:£0.9270
    • 100:£0.7100
    • 250:£0.6610
    • 500:£0.6100
    SI4166DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant
    Americas - 5000
    • 2500:$0.4080
    • 5000:$0.3860
    • 10000:$0.3730
    छवि भाग # विवरण
    SI4166DY-T1-GE3

    Mfr.#: SI4166DY-T1-GE3

    OMO.#: OMO-SI4166DY-T1-GE3

    MOSFET 30V Vds 20V Vgs SO-8
    SI4166DY

    Mfr.#: SI4166DY

    OMO.#: OMO-SI4166DY-1190

    नयाँ र मौलिक
    SI4166DY-T1-E3

    Mfr.#: SI4166DY-T1-E3

    OMO.#: OMO-SI4166DY-T1-E3-1190

    नयाँ र मौलिक
    SI4166DY-T1-GE3

    Mfr.#: SI4166DY-T1-GE3

    OMO.#: OMO-SI4166DY-T1-GE3-VISHAY

    MOSFET N-CH 30V 30.5A 8-SOIC
    SI4166DY-T1-GE3,SI4166DY

    Mfr.#: SI4166DY-T1-GE3,SI4166DY

    OMO.#: OMO-SI4166DY-T1-GE3-SI4166DY-1190

    नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4000
    मात्रा प्रविष्ट गर्नुहोस्:
    SI4166DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.५५
    US$ ०.५५
    10
    US$ ०.५३
    US$ ५.२७
    100
    US$ ०.५०
    US$ ४९.९४
    500
    US$ ०.४७
    US$ २३५.८०
    1000
    US$ ०.४४
    US$ ४४३.९०
    बाट सुरु गर्नुहोस्
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