SI9407BDY-T1-GE3

Mfr. #:: SI9407BDY-T1-GE3
निर्माता:: Vishay
विवरण:: MOSFET P-CH 60V 4.7A 8-SOIC
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI9407BDY-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: VISHAY

उत्पादन कोटि: FETs - एकल

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI9407BDY-GE3

एकाइ - वजन: 0.017870 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-SOIC (0.154", 3.90mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 1 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-SO

कन्फिगरेसन: एकल

FET-प्रकार: MOSFET P- च्यानल, धातु अक्साइड

पावर-अधिकतम: 5W

ट्रान्जिस्टर-प्रकार: 1 P-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 60V

इनपुट-Capacitance-Ciss-Vds: 600pF @ 30V

FET - सुविधा: मानक

वर्तमान-निरन्तर-नाली-Id-25°C: 4.7A (Tc)

Rds-on-max-Id-Vgs: 120 mOhm @ 3.2A, 10V

Vgs-th-max-Id: 3V @ 250μA

गेट-चार्ज-Qg-Vgs: 22nC @ 10V

Pd-शक्ति-डिसिपेशन: 2.4 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 30 ns

उदय-समय: 70 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 3.2 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: - 60 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 120 mOhms

ट्रान्जिस्टर-ध्रुवता: P- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 40 ns

सामान्य-टर्न-अन-डिले-समय: 30 ns

च्यानल-मोड: वृद्धि

Tags: SI9407BDY-T1-GE3, SI9407BDY-T1-G, SI9407BDY-T, SI9407BDY, SI9407BD, SI9407B, SI9407, SI940, SI94, SI9

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9407BDY-T1-GE3 विवरण

***ied Electronics & Automation: MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W

***ure Electronics: SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No

***nell: MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.4107
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.4219 25:$0.4069 62:$0.3929 125:$0.3799 312:$0.3699 625:$0.3699 1250:$0.3689
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3539 5000:$0.3439 10000:$0.3299 15000:$0.3209 25000:$0.3119
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3885) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3 DISTI # 29X0553	Vishay Intertechnologies	MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:5W , RoHS Compliant: Yes	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	P CHANNEL MOSFET, -60V, 4.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3. DISTI # 26AC3352	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 70026452	Vishay Siliconix	MOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 150mohm,Id 4.7A,SO-8,Pd 5W RoHS: Compliant	0	1:$0.7400 25:$0.7100 100:$0.6800 250:$0.6400 500:$0.6000
SI9407BDY-T1-GE3 DISTI # 781-SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	0	1:$1.1200 10:$0.9190 100:$0.7050 500:$0.6060 1000:$0.4790 2500:$0.4470 5000:$0.4250 10000:$0.4090
SI9407BDY-T1-GE3 DISTI # SI9407BDY-GE3	Vishay Intertechnologies	P-Ch 60V 4,7A 2,4W 0,12R SO8 RoHS: Compliant	0	50:€0.3720 100:€0.3120 500:€0.2820 2500:€0.2730
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	5:£0.9090 25:£0.8860 100:£0.6500
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	1:$1.6800 10:$1.4900 100:$1.1800 500:$0.9090 1000:$0.7180
SI9407BDY-T1-GE3.	Vishay Intertechnologies	MOSFET 60V 4.7A 5.0W 120mohm @ 10V RoHS: Compliant	Americas -	25:$0.5550
SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - Stock

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9407BDY-T1-GE3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SI9407BD OMO.#: OMO-SI9407BD-1190	नयाँ र मौलिक
	Mfr.#: SI9407BDY OMO.#: OMO-SI9407BDY-1190	नयाँ र मौलिक
	Mfr.#: SI9407BDY-T1 OMO.#: OMO-SI9407BDY-T1-1190	नयाँ र मौलिक
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE OMO.#: OMO-SI9407BDY-T1-GE-1190	नयाँ र मौलिक
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE3 GE3 OMO.#: OMO-SI9407BDY-T1-GE3-GE3-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 2500
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सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.३८~~; ~~US$ ०.३८~~

10: ~~US$ ०.३६~~; ~~US$ ३.६१~~

100: ~~US$ ०.३४~~; ~~US$ ३४.१७~~

500: ~~US$ ०.३२~~; ~~US$ १६१.३५~~

1000: ~~US$ ०.३०~~; ~~US$ ३०३.७०~~

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बाट सुरु गर्नुहोस्

SI9407BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes