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SIA517DJ-T1-GE3

SIA517DJ-T1-GE3
Mfr. #:
SIA517DJ-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N/P-CH 12V 4.5A SC-70-6
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIA517DJ-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIA517DJ-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SIA517DJ-GE3
एकाइ - वजन
0.000988 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAKR SC-70-6 Dual
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR SC-70-6 Dual
कन्फिगरेसन
1 N-Channel 1 P-Channel
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
6.5W
ट्रान्जिस्टर-प्रकार
1 N-Channel 1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
12V
इनपुट-Capacitance-Ciss-Vds
500pF @ 6V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
4.5A
Rds-on-max-Id-Vgs
29 mOhm @ 5A, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
15nC @ 8V
Pd-शक्ति-डिसिपेशन
6.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
10 ns 25 ns
उदय-समय
10 ns 25 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
4.5 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
12 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
24 mOhms 50 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
22 ns 30 ns
सामान्य-टर्न-अन-डिले-समय
10 ns 30 ns
च्यानल-मोड
वृद्धि
Tags
SIA517DJ-T1-G, SIA517DJ-T1, SIA517DJ-T, SIA517, SIA51, SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor; 4.3 A; 4.5 A; 12V; 6-Pin SC-70
***et Europe
Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R
***Components
In a Pack of 20, Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) Vishay SIA517DJ-T1-GE3
***ure Electronics
N- AND P-CHANNEL 12-V (D-S) MOSFET
***i-Key
MOSFET N/P-CH 12V 4.5A SC-70-6
***
N-AND P-CHANNEL 20-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.024Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:6.5W Rohs Compliant: No
***ment14 APAC
Prices include import duty and tax. MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6.5W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET CAN N/P, 12V, 4.5A, POWERPAK SC70; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:12V; Resistenza di Attivazione Rds(on):0.024ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:6.5W; Modello Case Transistor:PowerPAK SC70; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
भाग # Mfg। विवरण स्टक मूल्य
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2387
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 3000:$0.2864
  • 6000:$0.2203
  • 9000:$0.1754
  • 15000:$0.1482
  • 30000:$0.1364
  • 75000:$0.1322
  • 150000:$0.1283
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA517DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2099
  • 6000:$0.1979
  • 12000:$0.1969
  • 18000:$0.1969
  • 30000:$0.1959
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.5819
  • 6000:€0.3969
  • 12000:€0.3419
  • 18000:€0.3159
  • 30000:€0.2939
SIA517DJ-T1-GE3
DISTI # 05W6926		Vishay IntertechnologiesMOSFET, NP CHANNEL, 12V, 4.5A, POWERPAK SC70,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
  • 1:$0.7500
  • 10:$0.6340
  • 25:$0.5810
  • 50:$0.5280
  • 100:$0.4750
  • 500:$0.3490
  • 1000:$0.2690
SIA517DJ-T1-GE3.
DISTI # 15AC0288		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:6.5W , RoHS Compliant: No0
  • 1:$0.2170
  • 3000:$0.2100
  • 6000:$0.2030
SIA517DJ-T1-GE3
DISTI # 70616550		Vishay SiliconixSIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor,4.3 A,4.5 A,12V,6-Pin SC-70
RoHS: Compliant		0
  • 300:$0.5400
  • 600:$0.4800
  • 1500:$0.4200
  • 3000:$0.3800
SIA517DJ-T1-GE3
DISTI # 781-SIA517DJ-GE3		Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant		5505
  • 1:$0.6700
  • 10:$0.5060
  • 100:$0.3760
  • 500:$0.3090
  • 1000:$0.2390
  • 3000:$0.2170
  • 6000:$0.2030
SIA517DJ-T1-GE3
DISTI # 8141225P		Vishay IntertechnologiesTRANS MOSFET N/P-CH 12V 4.5A/4.3A, RL440
  • 200:£0.1960
SIA517DJ-T1-GE3
DISTI # 2889717		Vishay IntertechnologiesMOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70
RoHS: Compliant		0
  • 5:$1.2400
  • 25:$1.0200
  • 100:$0.8030
  • 250:$0.6600
  • 500:$0.5610
  • 1000:$0.5300
  • 5000:$0.5120
SIA517DJ-T1-GE3
DISTI # 2889717		Vishay IntertechnologiesMOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70
RoHS: Compliant		0
  • 5:£0.3710
  • 25:£0.3070
  • 100:£0.2750
  • 250:£0.2540
  • 500:£0.2370
SIA517DJ-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant		Americas - Stock
    छवि भाग # विवरण
    SIA517DJ-T1-GE3

    Mfr.#: SIA517DJ-T1-GE3

    OMO.#: OMO-SIA517DJ-T1-GE3

    		 MOSFET 12V Vds 8V Vgs PowerPAK SC-70
    SIA517DJ-T1-GE3-CUT TAPE

    Mfr.#: SIA517DJ-T1-GE3-CUT TAPE

    OMO.#: OMO-SIA517DJ-T1-GE3-CUT-TAPE-1190

    		 नयाँ र मौलिक
    SIA517DJ

    Mfr.#: SIA517DJ

    OMO.#: OMO-SIA517DJ-1190

    		 नयाँ र मौलिक
    SIA517DJ-T1-E3

    Mfr.#: SIA517DJ-T1-E3

    OMO.#: OMO-SIA517DJ-T1-E3-1190

    		 नयाँ र मौलिक
    SIA517DJ-T1-GE3

    Mfr.#: SIA517DJ-T1-GE3

    OMO.#: OMO-SIA517DJ-T1-GE3-VISHAY

    		 MOSFET N/P-CH 12V 4.5A SC-70-6
    SIA517DJ-T1-GE3(EEW)

    Mfr.#: SIA517DJ-T1-GE3(EEW)

    OMO.#: OMO-SIA517DJ-T1-GE3-EEW--1190

    		 नयाँ र मौलिक
    SIA517DJ-T4-GE3

    Mfr.#: SIA517DJ-T4-GE3

    OMO.#: OMO-SIA517DJ-T4-GE3-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIA517DJ-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.१६
    US$ ०.१६
    10
    US$ ०.१५
    US$ १.५०
    100
    US$ ०.१४
    US$ १४.२१
    500
    US$ ०.१३
    US$ ६७.१०
    1000
    US$ ०.१३
    US$ १२६.३०
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