IKQ40N120CH3XKSA1

Mfr. #:: IKQ40N120CH3XKSA1
निर्माता:: Infineon Technologies
विवरण:: IGBT HS SW 1200V 40A TO-247-3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IKQ40N120CH3XKSA1 डाटा पाना
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विशेषता मान

Tags: IKQ4, IKQ

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IKQ40N120CH3XKSA1 विवरण

***Components: In a Tube of 30, Infineon IKQ40N120CH3XKSA1 P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247

***et Europe: High speed switching series third generation IGBT

***i-Key: IGBT HS SW 1200V 40A TO-247-3

***ark: Igbt, 1.2Kv, 80A, 500W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, 1.2KV, 80A, 500W, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, 1.2KV, 80A, 500W, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IKQ40N120CH3XKSA1 DISTI # IKQ40N120CH3XKSA1-ND	Infineon Technologies AG	IGBT HS SW 1200V 40A TO-247-3 RoHS: Compliant Min Qty: 1 Container: Tube	191In Stock	720:$6.3015 240:$7.2366 25:$8.3344 10:$8.7410 1:$9.6800
IKQ40N120CH3XKSA1 DISTI # IKQ40N120CH3XKSA1	Infineon Technologies AG	High speed switching series third generation IGBT - Rail/Tube (Alt: IKQ40N120CH3XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.8900 1440:$4.9900 960:$5.0900 480:$5.2900 240:$5.4900
IKQ40N120CH3XKSA1 DISTI # SP001272706	Infineon Technologies AG	High speed switching series third generation IGBT (Alt: SP001272706) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€3.9900 500:€4.2900 100:€4.4900 50:€4.5900 25:€4.7900 10:€4.9900 1:€5.4900
IKQ40N120CH3XKSA1 DISTI # 93AC7069	Infineon Technologies AG	IGBT, 1.2KV, 80A, 500W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	170	500:$6.0600 250:$6.6500 100:$6.9600 50:$7.4800 25:$8.0100 10:$8.4000 1:$9.3000
IKQ40N120CH3XKSA1 DISTI # 726-IKQ40N120CH3XKSA	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	968	1:$9.2100 10:$8.3200 25:$7.9300 100:$6.8900 250:$6.5800 500:$6.0000
IKQ40N120CH3XKSA1 DISTI # 1623286	Infineon Technologies AG	IGBT 1200V 40A HIGHSPEED3 DIODE TO-247, TU	106	600:£4.0310 300:£4.3190 150:£4.6510 30:£5.0390
IKQ40N120CH3XKSA1 DISTI # 2986434	Infineon Technologies AG	IGBT, 1.2KV, 80A, 500W, TO-247	240	100:£5.0000 50:£5.3800 10:£5.7500 5:£6.6700 1:£7.2000
IKQ40N120CH3XKSA1 DISTI # 2986434	Infineon Technologies AG	IGBT, 1.2KV, 80A, 500W, TO-247 RoHS: Compliant	170	100:$7.3000 250:$7.3000 50:$8.8600 10:$9.0300 5:$9.7300 1:$10.8000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IKQ40N120CH3XKSA1 OMO.#: OMO-IKQ40N120CH3XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKQ40N120CT2XKSA1 OMO.#: OMO-IKQ40N120CT2XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKQ40N120CT2XKSA1 OMO.#: OMO-IKQ40N120CT2XKSA1-INFINEON-TECHNOLOGIES	IGBT HS SW 1200V 40A TO-247-3
	Mfr.#: IKQ40N120CH3 OMO.#: OMO-IKQ40N120CH3-1190	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: IKQ40N120CH3)
	Mfr.#: IKQ40N120CH3XKSA1 OMO.#: OMO-IKQ40N120CH3XKSA1-INFINEON-TECHNOLOGIES	IGBT HS SW 1200V 40A TO-247-3

उपलब्धता

स्टक:: Available
अर्डर मा:: 1500
मात्रा प्रविष्ट गर्नुहोस्:

IKQ40N120CH3XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ६.८०~~; ~~US$ ६.८०~~

10: ~~US$ ६.४६~~; ~~US$ ६४.६१~~

100: ~~US$ ६.१२~~; ~~US$ ६१२.१०~~

500: ~~US$ ५.७८~~; ~~US$ २ ८९०.५०~~

1000: ~~US$ ५.४४~~; ~~US$ ५ ४४०.९०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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IKQ40N120CH3XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes